IRG8P25N120KD-EPBF Details_IRG8P25N120KD-EPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	45 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 15A
Power - Max	180 W
Switching Energy	800µJ (on), 900µJ (off)
Input Type	Standard
Gate Charge	135 nC
Td (on/off) @ 25°C	20ns/170ns
Test Condition	600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)	70 ns
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD

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