NGB8206NTF4 Details_NGB8206NTF4 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	390 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	50 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 4.5V, 20A
Power - Max	150 W
Switching Energy	-
Input Type	Logic
Gate Charge	-
Td (on/off) @ 25°C	-/5µs
Test Condition	300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

Other

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