NGTB10N60FG Details_NGTB10N60FG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	72 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 10A
Power - Max	40 W
Switching Energy	-
Input Type	Standard
Gate Charge	55 nC
Td (on/off) @ 25°C	40ns/145ns
Test Condition	300V, 10A, 30Ohm, 15V
Reverse Recovery Time (trr)	70 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220F-3FS

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