IRG4IBC20KDPBF Details_IRG4IBC20KDPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	11.5 A
Current - Collector Pulsed (Icm)	23 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 9A
Power - Max	34 W
Switching Energy	340µJ (on), 300µJ (off)
Input Type	Standard
Gate Charge	34 nC
Td (on/off) @ 25°C	54ns/180ns
Test Condition	480V, 9A, 50Ohm, 15V
Reverse Recovery Time (trr)	37 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220AB Full-Pak

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