RGS30TSX2DGC11 Details_RGS30TSX2DGC11 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	45 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 15A
Power - Max	267 W
Switching Energy	740µJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	41 nC
Td (on/off) @ 25°C	30ns/70ns
Test Condition	600V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)	157 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247N

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