FGL40N120ANDTU Details_FGL40N120ANDTU PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	64 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 40A
Power - Max	500 W
Switching Energy	2.3mJ (on), 1.1mJ (off)
Input Type	Standard
Gate Charge	220 nC
Td (on/off) @ 25°C	15ns/110ns
Test Condition	600V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	112 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264-3

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