IRGSL15B60KDPBF Details_IRGSL15B60KDPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	31 A
Current - Collector Pulsed (Icm)	62 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 15A
Power - Max	208 W
Switching Energy	220µJ (on), 340µJ (off)
Input Type	Standard
Gate Charge	56 nC
Td (on/off) @ 25°C	34ns/184ns
Test Condition	400V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr)	92 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package	PG-TO262-3

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