STGB20H65DFB2 Details_STGB20H65DFB2 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HB2
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 20A
Power - Max	147 W
Switching Energy	265µJ (on), 214µJ (off)
Input Type	Standard
Gate Charge	56 nC
Td (on/off) @ 25°C	16ns/78.8ns
Test Condition	400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	215 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package	D2PAK-3

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