APT20GF120BRDQ1G Details_APT20GF120BRDQ1G PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	36 A
Current - Collector Pulsed (Icm)	64 A
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 15A
Power - Max	200 W
Switching Energy	895µJ (on), 840µJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	10ns/120ns
Test Condition	800V, 15A, 4.3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

Other

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