RGW80TK65GVC11 Details_RGW80TK65GVC11 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	39 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 40A
Power - Max	81 W
Switching Energy	760µJ (on), 720µJ (off)
Input Type	Standard
Gate Charge	110 nC
Td (on/off) @ 25°C	44ns/143ns
Test Condition	400V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

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