HGTG20N60B3 Details_HGTG20N60B3 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	160 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
Power - Max	165 W
Switching Energy	-
Input Type	Standard
Gate Charge	80 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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