STGB10NC60HDT4 Details_STGB10NC60HDT4 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Power - Max	65 W
Switching Energy	31.8µJ (on), 95µJ (off)
Input Type	Standard
Gate Charge	19.2 nC
Td (on/off) @ 25°C	14.2ns/72ns
Test Condition	390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)	22 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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