AUIRGP35B60PD Details_AUIRGP35B60PD PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.55V @ 15V, 35A
Power - Max	308 W
Switching Energy	220µJ (on), 215µJ (off)
Input Type	Standard
Gate Charge	160 nC
Td (on/off) @ 25°C	26ns/110ns
Test Condition	390V, 22A, 3.3Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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