STGP10NC60H Details_STGP10NC60H PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 5A
Power - Max	60 W
Switching Energy	31.8µJ (on), 95µJ (off)
Input Type	Standard
Gate Charge	19.2 nC
Td (on/off) @ 25°C	14.2ns/72ns
Test Condition	390V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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