NGTB25N120SWG Details_NGTB25N120SWG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 25A
Power - Max	385 W
Switching Energy	1.95mJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	178 nC
Td (on/off) @ 25°C	87ns/179ns
Test Condition	600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)	154 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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