HGTG5N120BND Details_HGTG5N120BND PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	21 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 5A
Power - Max	167 W
Switching Energy	450µJ (on), 390µJ (off)
Input Type	Standard
Gate Charge	53 nC
Td (on/off) @ 25°C	22ns/160ns
Test Condition	960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr)	65 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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