FGB5N60UNDF Details_FGB5N60UNDF PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	10 A
Current - Collector Pulsed (Icm)	15 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 5A
Power - Max	73.5 W
Switching Energy	80µJ (on), 70µJ (off)
Input Type	Standard
Gate Charge	12.1 nC
Td (on/off) @ 25°C	5.4ns/25.4ns
Test Condition	400V, 5A, 10Ohm, 15V
Reverse Recovery Time (trr)	35 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263AB (D²PAK)

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