IGP01N120H2 Details_IGP01N120H2 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	3.2 A
Current - Collector Pulsed (Icm)	3.5 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 1A
Power - Max	28 W
Switching Energy	140µJ
Input Type	Standard
Gate Charge	8.6 nC
Td (on/off) @ 25°C	13ns/370ns
Test Condition	800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	PG-TO220-3

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