IRGB4086PBF Details_IRGB4086PBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	300 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.96V @ 15V, 120A
Power - Max	160 W
Switching Energy	-
Input Type	Standard
Gate Charge	65 nC
Td (on/off) @ 25°C	36ns/112ns
Test Condition	196V, 25A, 10Ohm
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

Other

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