RJH60D7BDPQ-E0#T2 Details_RJH60D7BDPQ-E0#T2 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	90 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A
Power - Max	300 W
Switching Energy	700µJ (on), 1.4mJ (off)
Input Type	Standard
Gate Charge	125 nC
Td (on/off) @ 25°C	60ns/180ns
Test Condition	300V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)	25 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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