STGW20NB60KD Details_STGW20NB60KD PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 20A
Power - Max	170 W
Switching Energy	675µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	85 nC
Td (on/off) @ 25°C	39ns/105ns
Test Condition	480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)	80.5 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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