IRGB4062DPBF Details_IRGB4062DPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	48 A
Current - Collector Pulsed (Icm)	72 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 24A
Power - Max	250 W
Switching Energy	115µJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	50 nC
Td (on/off) @ 25°C	41ns/104ns
Test Condition	400V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)	89 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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