RJH60D6DPK-00#T0 Details_RJH60D6DPK-00#T0 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Power - Max	260 W
Switching Energy	850µJ (on), 600µJ (off)
Input Type	Standard
Gate Charge	104 nC
Td (on/off) @ 25°C	50ns/160ns
Test Condition	300V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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