RGT30TM65DGC9 Details_RGT30TM65DGC9 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	14 A
Current - Collector Pulsed (Icm)	45 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 15A
Power - Max	32 W
Switching Energy	-
Input Type	Standard
Gate Charge	32 nC
Td (on/off) @ 25°C	18ns/64ns
Test Condition	400V, 15A, 10Ohm, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NFM

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