STGF8NC60KD Details_STGF8NC60KD PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	7 A
Current - Collector Pulsed (Icm)	30 A
Vce(on) (Max) @ Vge, Ic	2.75V @ 15V, 3A
Power - Max	24 W
Switching Energy	55µJ (on), 85µJ (off)
Input Type	Standard
Gate Charge	19 nC
Td (on/off) @ 25°C	17ns/72ns
Test Condition	390V, 3A, 10Ohm, 15V
Reverse Recovery Time (trr)	23.5 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FP

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