IRGP6650DPBF Details_IRGP6650DPBF PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 35A
Power - Max	306 W
Switching Energy	300µJ (on), 630µJ (off)
Input Type	Standard
Gate Charge	75 nC
Td (on/off) @ 25°C	40ns/105ns
Test Condition	400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AC

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