STGW60V60F Details_STGW60V60F PDF Document_STMicroelectronics-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	240 A
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 60A
Power - Max	375 W
Switching Energy	750µJ (on), 550µJ (off)
Input Type	Standard
Gate Charge	334 nC
Td (on/off) @ 25°C	60ns/208ns
Test Condition	400V, 60A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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