APT35GA90B Details_APT35GA90B PDF Document_Microchip Technology-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	900 V
Current - Collector (Ic) (Max)	63 A
Current - Collector Pulsed (Icm)	105 A
Vce(on) (Max) @ Vge, Ic	3.1V @ 15V, 18A
Power - Max	290 W
Switching Energy	642µJ (on), 382µJ (off)
Input Type	Standard
Gate Charge	84 nC
Td (on/off) @ 25°C	12ns/104ns
Test Condition	600V, 18A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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