IKW30N65ES5XKSA1 Details_IKW30N65ES5XKSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	TrenchStop™
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	62 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 30A
Power - Max	188 W
Switching Energy	560µJ (on), 320µJ (off)
Input Type	Standard
Gate Charge	70 nC
Td (on/off) @ 25°C	17ns/124ns
Test Condition	400V, 30A, 13Ohm, 15V
Reverse Recovery Time (trr)	75 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3

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