RJH60F3DPK-00#T0 Details_RJH60F3DPK-00#T0 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.82V @ 15V, 20A
Power - Max	178.5 W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	140 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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