HGTG11N120CND Details_HGTG11N120CND PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	43 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 11A
Power - Max	298 W
Switching Energy	950µJ (on), 1.3mJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	23ns/180ns
Test Condition	960V, 11A, 10Ohm, 15V
Reverse Recovery Time (trr)	70 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247-3

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