NGTD28T65F2SWK Details_NGTD28T65F2SWK PDF Document_ON Semiconductor-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A
Power - Max	-
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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