IGW75N65H5XKSA1 Details_IGW75N65H5XKSA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	TrenchStop™
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	120 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A
Power - Max	395 W
Switching Energy	2.25mJ (on), 950µJ (off)
Input Type	Standard
Gate Charge	160 nC
Td (on/off) @ 25°C	28ns/174ns
Test Condition	400V, 75A, 8Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3

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