IKD04N60RAATMA1 Details_IKD04N60RAATMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	TrenchStop™
Package	Bulk
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	8 A
Current - Collector Pulsed (Icm)	12 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 4A
Power - Max	75 W
Switching Energy	90µJ (on), 150µJ (off)
Input Type	Standard
Gate Charge	27 nC
Td (on/off) @ 25°C	14ns/146ns
Test Condition	400V, 4A, 43Ohm, 15V
Reverse Recovery Time (trr)	43 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PG-TO252-3

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