RJP30E4DPE-00#J3 Details_RJP30E4DPE-00#J3 PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	*
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	-
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Switching Energy	-
Input Type	-
Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-
Mounting Type	-
Package / Case	-
Supplier Device Package	-

Other

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