MMBF5461 Details_MMBF5461 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	2 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	1 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 15V
Resistance - RDS(On)	-
Power - Max	225 mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

Other

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