2N4391 Details_2N4391 PDF Document_Vishay Siliconix-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	50 mA @ 20 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	4 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds	14pF @ 20V
Resistance - RDS(On)	30 Ohms
Power - Max	1.8 W
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-206AA (TO-18)

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