2SK715U-AC Details_2SK715U-AC PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	15 V
Current - Drain (Idss) @ Vds (Vgs=0)	7.3 mA @ 5 V
Current Drain (Id) - Max	50 mA
Voltage - Cutoff (VGS off) @ Id	600 mV @ 100 µA
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 5V
Resistance - RDS(On)	-
Power - Max	300 mW
Operating Temperature	125°C (TJ)
Mounting Type	Through Hole
Package / Case	SC-72
Supplier Device Package	3-SPA

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