TF256TH-4-TL-H Details_TF256TH-4-TL-H PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	-
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	140 µA @ 2 V
Current Drain (Id) - Max	1 mA
Voltage - Cutoff (VGS off) @ Id	100 mV @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	3.1pF @ 2V
Resistance - RDS(On)	-
Power - Max	100 mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, Flat Lead
Supplier Device Package	3-VTFP

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