TIS75_D75Z Details_TIS75_D75Z PDF Document_ON Semiconductor-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	8 mA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	800 mV @ 4 nA
Input Capacitance (Ciss) (Max) @ Vds	18pF @ 10V (VGS)
Resistance - RDS(On)	60 Ohms
Power - Max	350 mW
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3

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