2SK208-GR(TE85L,F) Details_2SK208-GR(TE85L,F) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	50 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	2.6 mA @ 10 V
Current Drain (Id) - Max	6.5 mA
Voltage - Cutoff (VGS off) @ Id	400 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds	8.2pF @ 10V
Resistance - RDS(On)	-
Power - Max	100 mW
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59

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