2N6028RLRP Details_2N6028RLRP PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Programmable Unijunction

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Voltage	40V
Power Dissipation (Max)	300 mW
Voltage - Output	11V
Voltage - Offset (Vt)	600 mV
Current - Gate to Anode Leakage (Igao)	10 nA
Current - Valley (Iv)	25 µA
Current - Peak	150 nA
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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