NSS60200DMTTBG Details_NSS60200DMTTBG PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	-
Vce Saturation (Max) @ Ib, Ic	450mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 100mA, 2V
Power - Max	-
Frequency - Transition	155MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Supplier Device Package	6-WDFN (2x2)

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