MMPQ2222 Details_MMPQ2222 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	4 NPN (Quad)
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 1V
Power - Max	1W
Frequency - Transition	300MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC

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