MDS150 Details_MDS150 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Frequency - Transition	1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	350W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Current - Collector (Ic) (Max)	4A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55AW
Supplier Device Package	55AW

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