2N3866 TRAY Details_2N3866 TRAY PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	500MHz
Noise Figure (dB Typ @ f)	-
Gain	10dB
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 50mA, 5V
Current - Collector (Ic) (Max)	400mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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