BFR750L3RHE6327 Details_BFR750L3RHE6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	37GHz
Noise Figure (dB Typ @ f)	0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Gain	21dB
Power - Max	360mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 60mA, 3V
Current - Collector (Ic) (Max)	90mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3

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