NTE55MCP Details_NTE55MCP PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	150V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 2A, 2V
Current - Collector (Ic) (Max)	8A
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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