BF799WE6327 Details_BF799WE6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	800MHz
Noise Figure (dB Typ @ f)	3dB @ 100MHz
Gain	-
Power - Max	280mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	PG-SOT323-3

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