BFG540,215 Details_BFG540,215 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 1.8dB @ 900MHz
Gain	-
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 40mA, 8V
Current - Collector (Ic) (Max)	120mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143B

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